Title :
Investigation of TID degradation of high voltage circuits in flash memory
Author :
Fengying Qiao ; Liyang Pan ; Xuemei Liu ; Haozhi Ma ; Dong Wu ; Jun Xu
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
The total ionizing dose (TID) radiation response of a flash memory circuit including high voltage (HV) periphery was studied. We show that functional failure of the charge pumps (CP) is mostly caused by an increased load current, due to radiation induced leakage current in the HV pass transistors. This leads to a failure to program/erase the array in turn.
Keywords :
flash memories; integrated circuit reliability; integrated memory circuits; leakage currents; power integrated circuits; power transistors; radiation effects; HV pass transistors; TID degradation; charge pump failure; flash memory circuit; high voltage circuits; high voltage periphery; radiation induced leakage current; total ionizing dose radiation response; Charge pumps; Current measurement; Degradation; Flash memories; Leakage currents; Loading; Transistors;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4799-0350-4
DOI :
10.1109/IIRW.2013.6804186
