DocumentCode
1972998
Title
Investigation of TID degradation of high voltage circuits in flash memory
Author
Fengying Qiao ; Liyang Pan ; Xuemei Liu ; Haozhi Ma ; Dong Wu ; Jun Xu
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
2013
fDate
13-17 Oct. 2013
Firstpage
170
Lastpage
172
Abstract
The total ionizing dose (TID) radiation response of a flash memory circuit including high voltage (HV) periphery was studied. We show that functional failure of the charge pumps (CP) is mostly caused by an increased load current, due to radiation induced leakage current in the HV pass transistors. This leads to a failure to program/erase the array in turn.
Keywords
flash memories; integrated circuit reliability; integrated memory circuits; leakage currents; power integrated circuits; power transistors; radiation effects; HV pass transistors; TID degradation; charge pump failure; flash memory circuit; high voltage circuits; high voltage periphery; radiation induced leakage current; total ionizing dose radiation response; Charge pumps; Current measurement; Degradation; Flash memories; Leakage currents; Loading; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location
South Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4799-0350-4
Type
conf
DOI
10.1109/IIRW.2013.6804186
Filename
6804186
Link To Document