DocumentCode
1973087
Title
A K-Band ION Implanted GaAs FET
Author
Li, Chiung T. ; Chen, Philip T. ; Wang, Patrick H.
fYear
1978
fDate
4-8 Sept. 1978
Firstpage
396
Lastpage
400
Abstract
An ion-implanted, 0.5 micron gate GaAs MESFET designed for K-band (18-26 GHz) applications is described in this paper. Silicon implantation was used to form both the channel and the N+ contact layers. The device has 9.8 dB gain at 18 GHz and its extrapolated fmax is about 80 GHz. At 25 GHz, it achieved 12.1 dBm output power as a tunable oscillator, and 11 dBmoutput power with 16 dB gain as a narrow band reflection type of amplifier.
Keywords
FETs; Gain; Gallium arsenide; K-band; MESFETs; Narrowband; Oscillators; Power amplifiers; Power generation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1978. 8th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.1978.332579
Filename
4131233
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