Title :
Computer Modelling of GaAs F.E.T.s
Author :
Brewitt-Taylor, C.R. ; Robson, P.N. ; Sitch, J.E.
Author_Institution :
Department of Electronic and Electrical Engineering, The University of Sheffield, Mappin Street, Sheffield S1 3JD, England.
Abstract :
A fast two dimensional computer simulation to model the transient and steady state performance of GaAs FETs has been written. Results from the simulation are used to describe some important features of operation including typical electric field and mobile charge distributions and the variation of the noise influence functions. An expression for the expected noise figure is obtained in terms of these noise influence functions and is compared with experimentally observed trends.
Keywords :
Computational modeling; Computer simulation; FETs; Finite element methods; Gallium arsenide; Neodymium; Noise figure; Poisson equations; Steady-state; Voltage;
Conference_Titel :
Microwave Conference, 1978. 8th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1978.332539
