Title :
Rapid melt grown germanium p-i-n photodiode wrapped around a silicon waveguide
Author :
Going, Ryan ; Tae Joon Seok ; Wu, Ming C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA
Abstract :
We report on a compact germanium photodiode design where single crystal germanium wraps around a single mode silicon waveguide. A 32 μm long, 626 aF, p-i-n device has 0.8 A/W responsivity at 1550 nm.
Keywords :
elemental semiconductors; germanium; optical fabrication; optical waveguides; p-i-n photodiodes; silicon; Ge-Si; capacitance 626 aF; compact germanium p-i-n photodiode; p-i-n device; rapid melt growth; responsivity; single crystal germanium; single mode silicon waveguide; size 32 mum; wavelength 1550 nm; Germanium; Optical device fabrication; Optical interconnections; Optical waveguides; PIN photodiodes; Silicon;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
