Title :
Influence of the thickness variation of the SiOx layer on the Si quantum dots based MOSLED
Author :
Bo-Han Lai ; Cheng, Chih-Hsien ; Gong-Ru Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The SiOx thickness affects the Si -QDs based MOSLED. The EL wavelength redshifts from 430 nm to 510 nm when the SiOx thickness increasing from 125 nm to 385 nm. The Si-QDs based MOSLED with the SiOx thickness of 385 nm has the maximum EL power of 469 nW.
Keywords :
electroluminescence; light emitting diodes; red shift; semiconductor quantum dots; silicon; silicon compounds; MOSLED; Si; SiO; power 469 nW; quantum dots; size 125 nm to 385 nm; thickness variation; wavelength 430 nm to 510 nm; Density measurement; Electric variables measurement; Films; Light emitting diodes; Plasma measurements; Size measurement; Thickness measurement; Si Quantum Dots; Si based MOSLED; Thickness of the SiOx;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-7111-9
DOI :
10.1109/ACP.2010.5682837
