DocumentCode :
1973289
Title :
Crystal Orientation Dependence of Impurity Dopant Incorporation in MOVPE-grown III-V Materials
Author :
Kondo, Makoto ; Anayama, Chikashi ; Tanahashi, Toshiyuki ; Yamazaki, Susumu
Author_Institution :
Fujitsu Laboratories Ltd., Japan
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
121
Lastpage :
122
Keywords :
Bonding; Crystalline materials; Doping; Epitaxial growth; Epitaxial layers; Gallium arsenide; III-V semiconductor materials; Impurities; Semiconductor process modeling; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664972
Filename :
664972
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1973289
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