Title :
A 4 GHz TWT Repiaceable GaAs MFSFET Amplifier
Author :
Arai, Youichi ; Murai, Shin-ichi ; Karnizo, Hidemitsu
Author_Institution :
Transmission Systems Laboratory, Fujitsu Laboratories Limited, Kawasaki, JAPAN
Abstract :
A 4 GHz 10 watt MESFET anplifier for replacerrent of a Traveling-Wave-Tube amplifier has been developed. The anplifier consists of a herrretically sealed five stage anplifier rrodule using GaAs MFSFET chips and DC power supply. The anplifier provides an output power of 10 watts at 1 dB gain conpression, a linear gain of 39 dB and a power efficiency of 18 percent over the operating frequency range from 3.6 GHz to 4.2 GHz.
Keywords :
Circuits; Frequency; Gain; Gallium arsenide; Iron; MESFETs; Power amplifiers; Power generation; Power supplies; Voltage;
Conference_Titel :
Microwave Conference, 1978. 8th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1978.332549
