Title :
Waveforms and Saturation in GaAs Power MESFETs
Author :
Sechi, F. ; Huang, H. ; Perlman, B.
Author_Institution :
RCA Laboratories, David Sarnoff Research Center, Princeton, NJ, 08540.
Abstract :
Measurements of voltage and current waveforms in power MESFETs have shown that voltage breakdown of the Schottky barrier is responsible for power saturation and consequent nonlinearity of MESFET amplifiers. Also, high peak drain-gate voltages affect device reliability and noise in FET oscillators.
Keywords :
Breakdown voltage; Current measurement; Dielectric breakdown; Gallium arsenide; MESFETs; Power amplifiers; Power measurement; Schottky barriers; Voltage measurement; Voltage-controlled oscillators;
Conference_Titel :
Microwave Conference, 1978. 8th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1978.332550
