DocumentCode
197342
Title
Si-based microcavity devices with Ge quantum dots
Author
Jinsong Xia ; Cheng Zeng ; Yong Zhang ; Yingjie Ma ; Zuimin Jiang ; Yu Jinzhong
Author_Institution
Wuhan Nat. Lab. for Optoelectron., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear
2014
fDate
8-13 June 2014
Firstpage
1
Lastpage
2
Abstract
Site-controlled single Ge quantum dot was grown on patterned silicon-on-insulator substrate. The single dot was then precisely embedded into a photonic crystal microcavity. Resonant photoluminescence was observed from the single Ge dot in the cavity.
Keywords
elemental semiconductors; germanium; microcavities; photoluminescence; photonic crystals; semiconductor devices; semiconductor quantum dots; silicon; Si; Si-Ge; Si-based microcavity devices; patterned silicon-on-insulator substrate; photonic crystal microcavity; resonant photoluminescence; site-controlled single quantum dots; Cavity resonators; Microcavities; Photonic crystals; Quantum dot lasers; Quantum dots; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6990008
Link To Document