DocumentCode
197344
Title
Controlling quantum dot energies using submonolayer bandstructure engineering
Author
Yu, Long ; Law, S. ; Jung, D. ; Lee, Minjoo Larry ; Wasserman, D.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois Urbana Champaign, Champaign, IL, USA
fYear
2014
fDate
8-13 June 2014
Firstpage
1
Lastpage
2
Abstract
We demonstrate control of energy states in epitaxially-grown sub-monolayer quantum dots by engineering of the internal bandstructure of the dots. We show shifts of the quantum dot ground state energy from 1.38eV to 1.68eV.
Keywords
band structure; epitaxial growth; ground states; quantum dots; energy state control; epitaxially-grown submonolayer quantum dots; internal bandstructure; quantum dot ground state energy shifts; submonolayer bandstructure engineering; Energy states; Epitaxial growth; Gallium arsenide; Optical device fabrication; Quantum dots; Stationary state;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6990009
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