DocumentCode :
1973510
Title :
Light extraction from photonic crystal ultra-thin GaN light-emitting diodes with ITO current spreading layer
Author :
Chao, Chia-Hsin ; Lai, Chun-Feng ; Kuo, Hao-Chung ; Yeh, Wen-Yung
Author_Institution :
Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute, Rm. 206, Bldg. 78, 195, Sec. 4, Chung Hsing Road, Chutung, Hsinchu 31040, Taiwan
fYear :
2009
fDate :
30-3 Aug. 2009
Firstpage :
1
Lastpage :
2
Abstract :
The optical effect of ITO current spreading layer on light extraction behavior of photonic crystal ultra-thin-film light-emitting diodes was investigated numerically. The slab-type ITO layer with half wavelength thickness behaves completely transparent to optical properties.
Keywords :
Degradation; Finite difference methods; Gallium nitride; Indium tin oxide; Light emitting diodes; Mirrors; Optical collimators; Optical diffraction; Photonic crystals; Transistors; current spreading; light-emitting diode; photonic crystal;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
Type :
conf
DOI :
10.1109/CLEOPR.2009.5292289
Filename :
5292289
Link To Document :
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