DocumentCode :
1973541
Title :
High light-extraction efficiency GaN-based vertical injection LEDs with surface nipple array
Author :
Chiu, C.H. ; Tsai, M.A. ; Yu, Peichen ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C.
Author_Institution :
Dept. of Photonics, Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear :
2009
fDate :
30-3 Aug. 2009
Firstpage :
1
Lastpage :
2
Abstract :
The surface nipple arrays were formed by self-assembled polystyrene nano-spheres and inductively coupled plasma etching. The light output power of the vertical-injection LEDs with nipple array shows 68% enhancement than that of without the nipple array at a driving current of 350 mA.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; nanoparticles; self-assembly; sputter etching; wide band gap semiconductors; GaN; light-extraction efficiency; plasma etching; self-assembled polystyrene nano-spheres; surface nipple array; vertical injection light emitting diodes; Etching; Gallium nitride; Light emitting diodes; Lithography; Optical arrays; Optical device fabrication; Power generation; Scanning electron microscopy; Self-assembly; Surface structures; GaN LEDs; nipple array; polystyrene nano-sphere;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
Type :
conf
DOI :
10.1109/CLEOPR.2009.5292290
Filename :
5292290
Link To Document :
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