Title :
Study on GaN micro-rod growth by nature patterned sapphire substrate
Author :
Hsu, S.-C. ; Tu, P.-M. ; Chen, I.R. ; Cheng, Y.-J.
Author_Institution :
Res. Center for Appl. Sci., Acad. Sinica, Taipei, Taiwan
Abstract :
In this study, we investigated the kinetics and etched morphology on sapphire substrate by mixing acid solutions. We developed different etching conditions to produce various etching morphology patterns on sapphire surface. Then, GaN micro-rod embedded with quantum wells (QWs) were grown on the patterned sapphire surface. The cathode luminescence (CL) images of these QW embedded micro-rods have shown great crystal quality.
Keywords :
III-V semiconductors; MOCVD; cathodoluminescence; etching; gallium compounds; light emitting diodes; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors; Al2O3; GaN; LED structure; MOCVD; cathode luminescence; crystal quality; kinetics; metal organic chemical vapor deposition; micro-rod; morphology patterns; quantum wells; sapphire substrate; wet etching; Cathodes; Cities and towns; Crystallization; Etching; Gallium nitride; Light emitting diodes; Luminescence; MOCVD; Substrates; Surface morphology; GaN; LED; MOCVD; NPSS; wet etching;
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
DOI :
10.1109/CLEOPR.2009.5292291
