Complementary field effect transistors for VLSI design on GaN and related alloys

Newfound quasi-particles in In_xGa_1-xN called excitons of the structure are used as the basis for the design of complementary n-channel and p-channel field effect transistors in this paper. These complementary transistors are applicable for VLSI design. The transistors use excitons of the structure as both quantum electron source for n-channel and quantum hole source for p-channel. Both FET channels are designed on non-doped GaN. The design of the electron source of the n-channel and the design of the hole source of the p-channel are given. The designs of both FET structures are given as well. The corresponding voltage-current characteristics presenting the dependences of the drain currents on the voltages drain-source and on the gate voltages are given. The switching times of both field effect transistors (n-channel and p-channel) are determined.