Passively mode-locked quantum dot diode lasers

Author

Liu, Jiaren ; Lu, Zhenguo ; Raymond, S. ; Poole, P.J. ; Barrios, P.J. ; Poitras, D. ; Grant, P.

Author_Institution

Inst. for Microstruct. Sci., Nat. Res. Council, Ottawa, ON, Canada

fYear

2009

fDate

30-3 Aug. 2009

Firstpage

1

Lastpage

2

Abstract

Passively mode-locked quantum-dot diode lasers without saturable absorbers and artificial dispersion compensators are successfully developed on an InAs/InP material system. Their ultra-high repetition rates up to 100 GHz, pulse durations down to 300 fs, and multi-wavelength synchronization operation are also demonstrated.

Keywords

III-V semiconductors; indium compounds; laser mode locking; optical pulse generation; quantum dot lasers; synchronisation; InAs-InP; material system; multiwavelength synchronization operation; passively mode-locked laser; pulse generation; quantum dot diode laser; time 300 fs; ultra-high repetition rate laser; Autocorrelation; Chemical lasers; Diode lasers; Fiber lasers; Laser mode locking; Optical pulse compression; Optical pulses; Optical waveguides; Quantum dot lasers; Waveguide lasers; diode laser; mode-locking; quantum dot;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-3829-7

Electronic_ISBN

978-1-4244-3830-3

Type

conf

DOI

10.1109/CLEOPR.2009.5292296

Filename

5292296