Title :
Passively mode-locked quantum dot diode lasers
Author :
Liu, Jiaren ; Lu, Zhenguo ; Raymond, S. ; Poole, P.J. ; Barrios, P.J. ; Poitras, D. ; Grant, P.
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res. Council, Ottawa, ON, Canada
Abstract :
Passively mode-locked quantum-dot diode lasers without saturable absorbers and artificial dispersion compensators are successfully developed on an InAs/InP material system. Their ultra-high repetition rates up to 100 GHz, pulse durations down to 300 fs, and multi-wavelength synchronization operation are also demonstrated.
Keywords :
III-V semiconductors; indium compounds; laser mode locking; optical pulse generation; quantum dot lasers; synchronisation; InAs-InP; material system; multiwavelength synchronization operation; passively mode-locked laser; pulse generation; quantum dot diode laser; time 300 fs; ultra-high repetition rate laser; Autocorrelation; Chemical lasers; Diode lasers; Fiber lasers; Laser mode locking; Optical pulse compression; Optical pulses; Optical waveguides; Quantum dot lasers; Waveguide lasers; diode laser; mode-locking; quantum dot;
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
DOI :
10.1109/CLEOPR.2009.5292296
