Title :
Photonic crystal nanocavity lasers with InAs quantum dots bonded onto silicon substrates
Author :
Tanabe, Katsuaki ; Nomura, Masahiro ; Guimard, Denis ; Iwamoto, Satoshi ; Arakawa, Yasuhiko
Author_Institution :
Inst. for Nano Quantum Inf. Electron., Univ. of Tokyo, Tokyo, Japan
Abstract :
Room temperature, continuous-wave lasing in a photonic crystal nanocavity bonded onto a silicon substrate was demonstrated by utilizing InAs quantum dots gain at 1.3 mum. A threshold absorbed power down to 2 muW was achieved.
Keywords :
III-V semiconductors; indium compounds; laser cavity resonators; microcavities; nanophotonics; photonic crystals; quantum dot lasers; semiconductor quantum dots; InAs; Si; continuous-wave lasing; indium arsenide quantum dots; photonic crystal nanocavity laser; semiconductor laser; silicon substrate; temperature 293 K to 298 K; threshold absorbed power; wavelength 1.3 mum; Bonding; Gallium arsenide; Optical coupling; Optical pumping; Photonic crystals; Pump lasers; Quantum dot lasers; Silicon; Slabs; Substrates; photonic crystal; quantum dot; semiconductor laser; silicon photonics;
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
DOI :
10.1109/CLEOPR.2009.5292300
