DocumentCode :
1973851
Title :
Selective Growth of Ultra-low Resistance GaAs/lnGaAs for High Performance lnGaAs FETs
Author :
Hiruma, K. ; Yazawa, M. ; Matsumoto, H. ; Kagaya, O. ; Miyazaki, M. ; Umemoto, Y.
Author_Institution :
Central Research Laboratory, Japan
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
126
Lastpage :
127
Keywords :
Contact resistance; Doping; Electrical resistance measurement; Epitaxial growth; FETs; Gallium arsenide; Gold; Indium gallium arsenide; Laboratories; Lattices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664975
Filename :
664975
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1973851
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