An 800-Watts Power Solution Module for L-band Pulsed Radar Applications

The performance of a state-of-the-art L-band 800- Watts peak power module for pulsed Radar application is described. The NPN silicon bipolar junction transistor chips are designed and fabricated at Microsemi PPG. These packaged transistors are internally matched and are constructed with BeO packages for best heat dissipation. Operating under 300 uS pulse width, 10% duty cycle, the power module delivers more than 800 W output power over the bandwidth of 1200 MHz to 1400 MHz. When operated under 5 uS pulse width, 5% duty cycle, the output power exceeds 1 KW with 8.9 dB power gain across the same frequency range.