• DocumentCode
    1974
  • Title

    Sputtered–Anodized \\hbox {Ta}_{2}\\hbox {O}_{5} as the Dielectric Layer for Electrowetting-on-Dielectric

  • Author

    Lian-Xin Huang ; Bonhye Koo ; Chang-Jin Kim

  • Author_Institution
    Mech. & Aerosp. Eng. Dept., Univ. of California, Los Angeles, Los Angeles, CA, USA
  • Volume
    22
  • Issue
    2
  • fYear
    2013
  • fDate
    Apr-13
  • Firstpage
    253
  • Lastpage
    255
  • Abstract
    Evaluating the anodized tantalum pentoxide (Ta2O5) that has been recently reported as a dielectric for low-voltage electrowetting-on-dielectric (EWOD) devices, we find a severe deterioration in performance if the working liquid is actuated with positive dc voltage. In an effort to reduce the limitation of this otherwise attractive dielectric material for EWOD, proposed herein is a Ta2O5 layer prepared by anodizing a sputtered Ta2O5 film. This sputtered-anodized Ta2O5 allows the use of positive dc signals, while maintaining the low-voltage actuation for which the anodized Ta2O5 was originally introduced. All the EWOD tests were performed with a conductive liquid droplet in an air environment.
  • Keywords
    dielectric devices; dielectric materials; tantalum compounds; wetting; EWOD devices; EWOD tests; Ta2O5; air environment; conductive liquid droplet; dielectric layer; dielectric material; low voltage electrowetting-on-dielectric devices; low-voltage actuation; positive dc voltage; sputtered anodized tantalum pentoxide; working liquid; Dielectric materials; Dielectrics; Electrochemical processes; Films; Liquids; Performance evaluation; Reliability; Dielectric; electrowetting; electrowetting-on-dielectric (EWOD); tantalum pentoxide;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2012.2233719
  • Filename
    6407626