DocumentCode :
1974
Title :
Sputtered–Anodized \\hbox {Ta}_{2}\\hbox {O}_{5} as the Dielectric Layer for Electrowetting-on-Dielectric
Author :
Lian-Xin Huang ; Bonhye Koo ; Chang-Jin Kim
Author_Institution :
Mech. & Aerosp. Eng. Dept., Univ. of California, Los Angeles, Los Angeles, CA, USA
Volume :
22
Issue :
2
fYear :
2013
fDate :
Apr-13
Firstpage :
253
Lastpage :
255
Abstract :
Evaluating the anodized tantalum pentoxide (Ta2O5) that has been recently reported as a dielectric for low-voltage electrowetting-on-dielectric (EWOD) devices, we find a severe deterioration in performance if the working liquid is actuated with positive dc voltage. In an effort to reduce the limitation of this otherwise attractive dielectric material for EWOD, proposed herein is a Ta2O5 layer prepared by anodizing a sputtered Ta2O5 film. This sputtered-anodized Ta2O5 allows the use of positive dc signals, while maintaining the low-voltage actuation for which the anodized Ta2O5 was originally introduced. All the EWOD tests were performed with a conductive liquid droplet in an air environment.
Keywords :
dielectric devices; dielectric materials; tantalum compounds; wetting; EWOD devices; EWOD tests; Ta2O5; air environment; conductive liquid droplet; dielectric layer; dielectric material; low voltage electrowetting-on-dielectric devices; low-voltage actuation; positive dc voltage; sputtered anodized tantalum pentoxide; working liquid; Dielectric materials; Dielectrics; Electrochemical processes; Films; Liquids; Performance evaluation; Reliability; Dielectric; electrowetting; electrowetting-on-dielectric (EWOD); tantalum pentoxide;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2012.2233719
Filename :
6407626
Link To Document :
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