Title :
High Performance GaAs Schottky Barrier Diodes using a Cantilevered Metal Contact
Author :
Boccon-Gibod, Dominique ; Harrop, Peter
Abstract :
A planar Schottky diode of original structure has been developed using a suspended contact between the active diode area and the ohmic contact to increase the device cut-off frequency and make a low cost reliable device. Self-alignment techniques were used to define the active diode area. Cut-off frequencies in excess of 2 000 GHz have been measured and series resistances around 1.3 ohms. The diodes have been used in waveguide and microstrip mixer structures and conversion loss measurements will be presented.
Keywords :
Costs; Cutoff frequency; Electrical resistance measurement; Frequency measurement; Gallium arsenide; Microstrip; Mixers; Ohmic contacts; Schottky barriers; Schottky diodes;
Conference_Titel :
Microwave Conference, 1978. 8th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1978.332611
