Delay Time and Power Supply Current Characteristics of CMOS Inverter Broken by Intentional High Power Microwave

This paper examined delay time and breakdown effects of CMOS inverter by impact of high power microwave. The experiments employed a waveguide and a magnetron to study the supply current characteristics of CMOS inverter broken by high power microwave. The CMOS inverters were composed of a LED circuit for visual discernment. Also CMOS inverters broken by high power microwave were observed with supply current and delay time. When power supply current increased 2.14 times for normal current at the 10 kV/m, the CMOS inverter was broken by Latch-up. Also the CMOS inverter broken by Latch-up returned to function of original condition because parasitic impedance inside chip was increased with time. Based on the result, CMOS devices were applied to the data which understood microwave effects of electronic equipment.