Title :
A Monolithic GaAs Schottky-Barrier Diode Mixer for 15 GHz
Author :
Ristow, D. ; Enders, N. ; Kniepkamp, H.
Author_Institution :
Siemens AG, Forschungslaboratorien, Postfach 801709, 8000 Mÿnchen, F R G
Abstract :
A planar GaAs Schottky-barrier diode was built by distributing several capacitance of 1 × 2 ¿m2 over the whole width of a transmission line and connecting them in parallel. These diodes were used in a monolithically integrated balanced mixer on GaAs. The technology was chosen to obtain the simplest simultaneous fabrication for Schottky diode and MESFET, and the first samples of the mixer have shown a conversion loss of 5.5 dB at 15 GHz, the IF being 70 MHz, and 8 SSB-noise figure of 10 dB including 1.5 dB IF noise.
Keywords :
Capacitance; Contact resistance; Dielectric substrates; Fabrication; Gallium arsenide; MESFETs; Monolithic integrated circuits; Ohmic contacts; Schottky barriers; Schottky diodes;
Conference_Titel :
Microwave Conference, 1978. 8th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1978.332619
