• DocumentCode
    1974168
  • Title

    A Monolithic GaAs Schottky-Barrier Diode Mixer for 15 GHz

  • Author

    Ristow, D. ; Enders, N. ; Kniepkamp, H.

  • Author_Institution
    Siemens AG, Forschungslaboratorien, Postfach 801709, 8000 Mÿnchen, F R G
  • fYear
    1978
  • fDate
    4-8 Sept. 1978
  • Firstpage
    707
  • Lastpage
    711
  • Abstract
    A planar GaAs Schottky-barrier diode was built by distributing several capacitance of 1 × 2 ¿m2 over the whole width of a transmission line and connecting them in parallel. These diodes were used in a monolithically integrated balanced mixer on GaAs. The technology was chosen to obtain the simplest simultaneous fabrication for Schottky diode and MESFET, and the first samples of the mixer have shown a conversion loss of 5.5 dB at 15 GHz, the IF being 70 MHz, and 8 SSB-noise figure of 10 dB including 1.5 dB IF noise.
  • Keywords
    Capacitance; Contact resistance; Dielectric substrates; Fabrication; Gallium arsenide; MESFETs; Monolithic integrated circuits; Ohmic contacts; Schottky barriers; Schottky diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1978. 8th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1978.332619
  • Filename
    4131289
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1974168