DocumentCode
1974274
Title
Analytical Design and Simulation Studies of Super-junction Power MOSFET
Author
Pravin, Kondekar N.
Author_Institution
Inf. & Commun. Univ., Daejeon
fYear
2007
fDate
4-7 June 2007
Firstpage
503
Lastpage
508
Abstract
Using the super-junction theory we develop an analytical design methodology for high voltage Super-junction power MOSFET, which offers very low on resistance as compared with VDMOS power device due to higher doping density in the drift region. This method is used to analytically design various rating super-junction power MOSFET and using simulation tools, the validity of this method is established and then used to study the physical mechanisms underlying the device operation.
Keywords
power MOSFET; MOSFET Simulation; MOSFET design; doping density; drift region; super-junction theory; superjunction power MOSFET; Analytical models; Design engineering; Doping; Electric resistance; Geometry; Information analysis; MOSFET circuits; Power MOSFET; Power engineering and energy; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics, 2007. ISIE 2007. IEEE International Symposium on
Conference_Location
Vigo
Print_ISBN
978-1-4244-0754-5
Electronic_ISBN
978-1-4244-0755-2
Type
conf
DOI
10.1109/ISIE.2007.4374648
Filename
4374648
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