High-Frequency Characteristics of 40Gb/s Electroabsorption Modulator-Integrated DFB Lasers: Effect of Traveling-Wave Electrode and Tilted Facet

Author

Kwon, Yong-Hwan ; Choe, Joong-Seon ; Sim, Jae-Sik ; Kim, Sung-Bock ; Yun, Hogyeong ; Choi, Kwang-Seong

Author_Institution

Electron. & Telecommun. Res. Inst., Daejeon

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

1

Lastpage

4

Abstract

We fabricated 40 Gb/s electroabsorption modulator-integrated DFB lasers (EMLs). Adopting traveling-wave (TW) electrode and tilted facet improved high-frequency characteristics of EMLs. The 3 dB bandwidth of E/O response for TW-EML was as large as 34 GHz, as compared with 27 GHz for lumped EML. Tilted facet formed by dry etching processes successfully reduced the optical feedback and the resonance in E/O response decreased to as small as 2.8 dB.

Keywords

distributed feedback lasers; electro-optical modulation; electroabsorption; etching; integrated optics; laser feedback; optical fibre communication; optical transmitters; semiconductor lasers; bit rate 40 Gbit/s; dry etching processes; electroabsorption modulator-integrated DFB lasers; lumped EML; optical feedback; tilted facet; traveling-wave electrode; Chirp modulation; Distributed feedback devices; Electrodes; Etching; Indium phosphide; Laser feedback; Optical feedback; Optical modulation; Optical waveguides; Waveguide lasers; component; electroabsorption; lumped; modulator; tilted; traveling-wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Conference_Location

Bangkok

Print_ISBN

978-1-4244-0748-4

Electronic_ISBN

978-1-4244-0749-1

Type

conf

DOI

10.1109/APMC.2007.4554714

Filename

4554714