DocumentCode
1974405
Title
High P/V Ratio of GalnAs/lnP Resonant Tunneling Diode by OMVPE
Author
Sekiguchi, Tomonori ; Miyamoto, Yasuyuki ; Furuya, Kazuhito
Author_Institution
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Japan
fYear
1992
fDate
8-11 Jun 1992
Firstpage
132
Lastpage
133
Keywords
Diodes; Electrons; Hydrogen; Indium phosphide; Inductors; Interference; Molecular beam epitaxial growth; Nitrogen; Resonant tunneling devices; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664978
Filename
664978
Link To Document