Title :
High P/V Ratio of GalnAs/lnP Resonant Tunneling Diode by OMVPE
Author :
Sekiguchi, Tomonori ; Miyamoto, Yasuyuki ; Furuya, Kazuhito
Author_Institution :
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Japan
Keywords :
Diodes; Electrons; Hydrogen; Indium phosphide; Inductors; Interference; Molecular beam epitaxial growth; Nitrogen; Resonant tunneling devices; Temperature;
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
DOI :
10.1109/MOVPE.1992.664978
