Title :
Microwave Bipolar Transistor Technology - Present and Prospects
Author_Institution :
Hewlett-Packard Company, Microwave Semiconductor Division, 350 West Trimble Road, San Jose, California 95131 USA
Abstract :
This paper reviews the present status and future prospects for Si bipolar transistors and monolithic integrated circuits designed for applications at frequencies above 500MHz. The technological limitations on performance are discussed as well as the fundamental strengths and basic terminal characteristics which insure that bipolar transistors and integrated circuits will continue to offer the most cost-effective solutions to many microwave system design problems in the coming decade of the 1980´s.
Keywords :
Bipolar integrated circuits; Bipolar transistors; Delay effects; Integrated circuit technology; MOSFETs; Microwave devices; Microwave integrated circuits; Microwave technology; Microwave transistors; Power transistors;
Conference_Titel :
Microwave Conference, 1979. 9th European
Conference_Location :
Brighton, UK
DOI :
10.1109/EUMA.1979.332672