DocumentCode :
1974631
Title :
Microwave Bipolar Transistor Technology - Present and Prospects
Author :
Snapp, Craig P.
Author_Institution :
Hewlett-Packard Company, Microwave Semiconductor Division, 350 West Trimble Road, San Jose, California 95131 USA
fYear :
1979
fDate :
17-20 Sept. 1979
Firstpage :
3
Lastpage :
12
Abstract :
This paper reviews the present status and future prospects for Si bipolar transistors and monolithic integrated circuits designed for applications at frequencies above 500MHz. The technological limitations on performance are discussed as well as the fundamental strengths and basic terminal characteristics which insure that bipolar transistors and integrated circuits will continue to offer the most cost-effective solutions to many microwave system design problems in the coming decade of the 1980´s.
Keywords :
Bipolar integrated circuits; Bipolar transistors; Delay effects; Integrated circuit technology; MOSFETs; Microwave devices; Microwave integrated circuits; Microwave technology; Microwave transistors; Power transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1979. 9th European
Conference_Location :
Brighton, UK
Type :
conf
DOI :
10.1109/EUMA.1979.332672
Filename :
4131314
Link To Document :
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