Title :
A 5 bit, 2.2 Gs/s monolithic A/D converter with gigahertz bandwidth, and 6 bit A/D converter system
Author :
Ducourant, T. ; Meignant, D. ; Bertsch, P. ; Wright, M.
Author_Institution :
Lab. d´´Electron. Philips, Limeil-Brevannes, France
Abstract :
Using a conventional flash structure, a 5-b GaAs analog-to-digital (A/D) converter has been designed. The IC is capable of a sampling rate as high as 2.2 Gs/s with gigahertz input bandwidth. The internal power consumption is 320 mW (plus 730 mW for the 14 ECL (emitter-coupled-logic) output buffers). This result appears to be the best obtained so far, for a GaAs A/D converter. The GaAs chip has been fabricated using the fully stabilized 0.7- mu m E-MESFET process. The IC can be fabricated in a reproducible way.<>
Keywords :
Schottky gate field effect transistors; analogue-digital conversion; emitter-coupled logic; field effect integrated circuits; 0.7 micron; E-MESFET process; ECL; flash structure; gigahertz bandwidth; internal power consumption; monolithic A/D converter; sampling rate; Bandwidth; Clocks; Design optimization; Energy consumption; FETs; Foundries; Frequency conversion; Gallium arsenide; MESFETs; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69356
