DocumentCode
1974657
Title
Analysis of electrical field distribution in terahertz SI-GaAs photoconductive antennas
Author
Shi, Wei ; Zhang, Zhen-Zhen ; Hou, Lei
Author_Institution
Appl. Phys. Dept., Xi´´an Univ. of Technol., Jinhua, China
fYear
2009
fDate
30-3 Aug. 2009
Firstpage
1
Lastpage
2
Abstract
Distribution of electrical field in four kinds of antennas with different gaps were tested, and electrical field enhancement on the anodes is testified, the electrical field distributes in a large region, which extends from several tens of microns to hundreds of microns which is decided by the gap size.
Keywords
III-V semiconductors; dipole antennas; gallium arsenide; photoconductivity; submillimetre wave antennas; terahertz wave devices; GaAs; anodes; electrical field distribution analysis; electrical field enhancement; photoconductive dipole antenna; terahertz semiinsulating photoconductive antennas; Anodes; Dipole antennas; Electrodes; Erbium-doped fiber lasers; Laser beams; Laser excitation; Laser mode locking; Photoconductivity; Pump lasers; Testing; Electrical field distribution; Photoconductive dipole antennas; SI-GaAs; Terahertz radiation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-3829-7
Electronic_ISBN
978-1-4244-3830-3
Type
conf
DOI
10.1109/CLEOPR.2009.5292342
Filename
5292342
Link To Document