DocumentCode
1974730
Title
AIGaAs/GaAs Heterojunction Bipolar Transistors with C-Doped Base Grown by AP-MOVPE
Author
Tanaka, S. ; Ito, M. ; Ikeda, M. ; Kikuta, T.
Author_Institution
Yokohama R&D Laboratories, The Furukawa Electric Co., LTD., Japan
fYear
1992
fDate
8-11 Jun 1992
Firstpage
136
Lastpage
137
Keywords
Carbon dioxide; Electrical resistance measurement; Gallium arsenide; Gases; Geometry; Heterojunction bipolar transistors; Inductors; Laboratories; Molecular beam epitaxial growth; Research and development;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664980
Filename
664980
Link To Document