DocumentCode
1974866
Title
Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier at 670 nm
Author
Chi, Mingjun ; Jensen, Ole B. ; Erbert, G. ; Sumpf, B. ; Petersen, P.M.
Author_Institution
Dept. of Photonics Eng., Tech. Univ. of Denmark, Roskilde, Denmark
fYear
2009
fDate
30-3 Aug. 2009
Firstpage
1
Lastpage
2
Abstract
A narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. 800 mW output power is obtained, and the laser system is tunable from 655 to 679 nm.
Keywords
laser beams; laser cavity resonators; laser tuning; semiconductor optical amplifiers; external-cavity tapered amplifier; laser power; narrow-linewidth semiconductor laser; power 800 mW; semiconductor optical amplifier; tunable high-power laser; wavelength 655 nm to 679 nm; Diffraction; Diode lasers; High power amplifiers; Laser beams; Lenses; Power generation; Power lasers; Semiconductor lasers; Semiconductor optical amplifiers; Tunable circuits and devices; Semiconductor tapered amplifier; external-cavity;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-3829-7
Electronic_ISBN
978-1-4244-3830-3
Type
conf
DOI
10.1109/CLEOPR.2009.5292354
Filename
5292354
Link To Document