Title :
3D TCAD based approach for the evaluation of nanoscale devices during ESD failure
Author :
Shrivastava, Mayank ; Gossner, Harald ; Baghini, Maryam Shojaei ; Rao, Valipe Ramgopal
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol.-Bombay, Mumbai, India
Abstract :
This paper demonstrates a 3D TCAD based approach towards the evaluation and pre-silicon development of nanoscale devices for advanced ESD protection concepts. Impact of various physical models and parameters on the accuracy of predicted ESD figures of merit are discussed. Moreover, various devices options, have been evaluated from 3D TCAD simulations.
Keywords :
electrostatic discharge; nanoelectronics; technology CAD (electronics); 3D TCAD simulation; ESD failure; nanoscale device evaluation; pre-silicon development; Current density; Electrostatic discharge; Predictive models; Solid modeling; Stress; Temperature; Three dimensional displays; ESD; It2; moving filaments; on-state spreading; space charge modulation; thermal failure;
Conference_Titel :
SoC Design Conference (ISOCC), 2010 International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-8633-5
DOI :
10.1109/SOCDC.2010.5682919
