CMOS technology for RF application

Author

Iwai, Hiroshi

Author_Institution

Dept. of Adv. Appl. Electron., Tokyo Inst. of Technol., Yokohama, Japan

Volume

1

fYear

2000

fDate

2000

Firstpage

27

Abstract

CMOS has been used for advanced LSIs so many years because of its excellent low-power and high-speed characteristics for highly-integrated digital circuits. For high frequency analog applications such as RF, it has not been used popularly because CMOS has been assumed to have poor capability compared with silicon bipolar and compound semiconductor devices. However, recent miniaturization of CMOS devices has significantly improved the CMOS RF characteristics. For example, typical values of f_T and f_max for 0.25 μm n-MOSFETs already exceed 40 GHz, and those for 0.1 μm n-MOSFETs are more than 100 GHz. RF noise of the MOSFETs are also as good as less than 1 dB at 2 GHz operation. In this paper, CMOS technology for RF frontend circuit for mobile telecommunication devices is explained

Keywords

CMOS analogue integrated circuits; large scale integration; CMOS LSI technology; RF front-end circuit; analog circuit; mobile telecommunication device; n-MOSFET; CMOS digital integrated circuits; CMOS logic circuits; CMOS technology; Electrodes; Integrated circuit technology; MOSFETs; Metal-insulator structures; Plasma temperature; Radio frequency; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. Proceedings. 2000 22nd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-5235-1

Type

conf

DOI

10.1109/ICMEL.2000.840527

Filename

840527