Title :
On the Transient behavior of various drain extended MOS devices under the ESD stress condition
Author :
Shrivastava, Mayank ; Gossner, Harald ; Baghini, Maryam Shojaei ; Rao, V. Ramgopal
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol.-Bombay, Mumbai, India
Abstract :
This paper presents ESD evaluation of various nanoscale drain extended MOS devices. Current and time evolution of current filaments formed under the ESD stress conditions are investigated. A complete picture of device´s behavior at the onset of space charge modulation and the evolution of current filamentation is discussed based on Transient Interferometric mapping studies.
Keywords :
CMOS integrated circuits; ULSI; electrostatic discharge; transient analysis; CMOS process; ESD stress condition; current filamentation; drain extended ULSI devices; nanoscale drain extended MOS devices; space charge modulation; transient behavior; transient interferometric mapping; Electrostatic discharge; Heating; Junctions; MOS devices; Modulation; Space charge; Transient analysis; Drain extended MOS; ESD; It2; TIM; base push out; current filament; space charge modulation;
Conference_Titel :
SoC Design Conference (ISOCC), 2010 International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-8633-5
DOI :
10.1109/SOCDC.2010.5682922
