Title :
Extraction of the bulk-charge effect parameter in MOSFETs
Author :
Sánchez, F. J García ; Ortiz-Conde, A. ; Salcedo, J.A. ; Liou, J.J. ; Yue, Y.
Author_Institution :
Dept. of Electron., Univ. Simon Bolivar, Caracas, Venezuela
Abstract :
A method is presented to extract the bulk charge effect parameter in MOSFET. The method requires measuring the drain current as a function of gate voltage at two small values of the drain voltage. The procedure was tested with Id-Vgs characteristics modeled with SPICE and with a a 2-D device simulator. It was also applied to experimental Id-Vgs characteristics
Keywords :
MOSFET; SPICE; semiconductor device models; 2D device simulation; I-V characteristics; MOSFET; SPICE model; bulk charge effect; drain current; parameter extraction; Capacitance; Current measurement; Equations; MOSFETs; SPICE; Testing; Threshold voltage; USA Councils; Variable structure systems; Voltage measurement;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840539
