DocumentCode
1975280
Title
High Power X-Band GaAs Field Effect Transistors
Author
Hewitt, B.S. ; Ellis, R.C. ; Thomas, R.P. ; Healy, R.M. ; Benedek, M.
Author_Institution
Raytheon Company, Special Microwave Devices Operation, 130 Second Avenue, Waltham, Massachusetts 02154
fYear
1979
fDate
17-20 Sept. 1979
Firstpage
265
Lastpage
271
Abstract
Design considerations and processing techniques related to high power X-band GaAs field effect transistors will be presented. Particular emphasis will be placed on the problems associated with common lead inductance, gate-drain breakdown voltage and thermal resistance. The microwave performance of large periphery designs (up to 10 mms) will be reported. The superior performance of via-hole source connected devices with integral plated heat sinks will be stressed.
Keywords
Bandwidth; Bridge circuits; Electromagnetic heating; Gallium arsenide; Heat sinks; Inductance; Microwave FETs; Microwave devices; Process design; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1979. 9th European
Conference_Location
Brighton, UK
Type
conf
DOI
10.1109/EUMA.1979.332711
Filename
4131353
Link To Document