• DocumentCode
    1975295
  • Title

    Flip-Chip Mounted GaAs Power Fet with Improved Performance in X to Ku Band

  • Author

    Mitsui, Y. ; Otsubo, M. ; Ishii, T. ; Mitsui, S. ; Shirahata, K.

  • Author_Institution
    Semiconductor Laboratory, Mitsubishi Electric Corporation, Itami, Japan
  • fYear
    1979
  • fDate
    17-20 Sept. 1979
  • Firstpage
    272
  • Lastpage
    276
  • Abstract
    A GaAs power MESFET with a new structure, which allows extremely reduced source inductances and minimized thermal resistance, has been developed. In the structure, the chip with metal posts plated on the source, drain and gate pads is connected directly to the package with no wire. Best results obtained are 2.5 W at 15 GHz and 4.1 W at 12 GHz.
  • Keywords
    Bonding; FETs; Frequency; Gallium arsenide; Heat sinks; MESFETs; Packaging; Performance gain; Thermal resistance; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1979. 9th European
  • Conference_Location
    Brighton, UK
  • Type

    conf

  • DOI
    10.1109/EUMA.1979.332712
  • Filename
    4131354
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1975295