Title :
Flip-Chip Mounted GaAs Power Fet with Improved Performance in X to Ku Band
Author :
Mitsui, Y. ; Otsubo, M. ; Ishii, T. ; Mitsui, S. ; Shirahata, K.
Author_Institution :
Semiconductor Laboratory, Mitsubishi Electric Corporation, Itami, Japan
Abstract :
A GaAs power MESFET with a new structure, which allows extremely reduced source inductances and minimized thermal resistance, has been developed. In the structure, the chip with metal posts plated on the source, drain and gate pads is connected directly to the package with no wire. Best results obtained are 2.5 W at 15 GHz and 4.1 W at 12 GHz.
Keywords :
Bonding; FETs; Frequency; Gallium arsenide; Heat sinks; MESFETs; Packaging; Performance gain; Thermal resistance; Wire;
Conference_Titel :
Microwave Conference, 1979. 9th European
Conference_Location :
Brighton, UK
DOI :
10.1109/EUMA.1979.332712
