DocumentCode :
1975308
Title :
A Reliability Study of Power GaAs FETs
Author :
Drukier, I. ; Silcox, J.F., Jr.
fYear :
1979
fDate :
17-20 Sept. 1979
Firstpage :
277
Lastpage :
281
Abstract :
Accelerated life tests on power GaAs FETs have shown these devices to be reliable components. At an operating temperature of 125°C a MTTF of 4 × 106 hours is predicted. The activation energy of this process is 1.8eV. Failures are related to the gate.
Keywords :
Circuit testing; FETs; Failure analysis; Gallium arsenide; Life testing; Microwave devices; Microwave measurements; Packaging; Power system reliability; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1979. 9th European
Conference_Location :
Brighton, UK
Type :
conf
DOI :
10.1109/EUMA.1979.332713
Filename :
4131355
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1975308
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