DocumentCode :
1975380
Title :
GalnP Multiwafer Growth (7x 2", 5 x 3") by LP-MOVPE for HBT, Laser LED or Solar Cells
Author :
Schmitz, D. ; Lengeling, G. ; Strauch, G. ; Hergeth, J. ; Jürgensen, H.
Author_Institution :
AIXTRON Semiconductor Technologies Aachen, Germany
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
142
Lastpage :
142
Keywords :
Costs; Epitaxial growth; Epitaxial layers; Heterojunction bipolar transistors; Inductors; Lattices; Light emitting diodes; Photovoltaic cells; Semiconductor lasers; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664983
Filename :
664983
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1975380
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