DocumentCode
1975380
Title
GalnP Multiwafer Growth (7x 2", 5 x 3") by LP-MOVPE for HBT, Laser LED or Solar Cells
Author
Schmitz, D. ; Lengeling, G. ; Strauch, G. ; Hergeth, J. ; Jürgensen, H.
Author_Institution
AIXTRON Semiconductor Technologies Aachen, Germany
fYear
1992
fDate
8-11 Jun 1992
Firstpage
142
Lastpage
142
Keywords
Costs; Epitaxial growth; Epitaxial layers; Heterojunction bipolar transistors; Inductors; Lattices; Light emitting diodes; Photovoltaic cells; Semiconductor lasers; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664983
Filename
664983
Link To Document