DocumentCode :
1975411
Title :
13 GHz FET Negative Resistance 0.5 W Amplifier
Author :
Nicotra, S.
Author_Institution :
Radio Link Lab. - TELETTRA, Vimercate (Italy)
fYear :
1979
fDate :
17-20 Sept. 1979
Firstpage :
303
Lastpage :
307
Abstract :
A two-stage 13 GHz negative resistance amplifier utilizing commercially available GaAs FETs in a sealed container has been realized. The amplifier performs a 0.5 W output power, a 16 dB linear gain, an AM to PM conversion cf less than 3°/dB in the instantaneous bandwidth of 500 MHz. The estimated MTTF exceeds 106 hours. Its application in a 34 Mbit/s 4-PSK 13 GHz radio link is being described.
Keywords :
Bandwidth; Containers; Diodes; FETs; Frequency; Gunn devices; Impedance; Power amplifiers; Power generation; Radio link;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1979. 9th European
Conference_Location :
Brighton, UK
Type :
conf
DOI :
10.1109/EUMA.1979.332718
Filename :
4131360
Link To Document :
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