Title :
Switching & Frequency Conversion using Dual-Gate FETs
Author :
Tsai, W.C. ; Paik, S.F. ; Hewitt, B.S.
Author_Institution :
Raytheon Company, Special Microwave Devices Operation, 130 Second Avenue, Waltham, Massachusetts 02154
Abstract :
Dual-gate FETs may be used for a variety of circuits designed for non-amplifying functions, which have been performed in the past by two-terminal devices. Examples of dual-gate FET circuits described are: a high-speed broadband switch, a high-speed phase modulator, and a frequency up-converter.
Keywords :
Diodes; Electrodes; FETs; Frequency conversion; Phase modulation; Phase shifters; Radio frequency; Switches; Switching circuits; Switching converters;
Conference_Titel :
Microwave Conference, 1979. 9th European
Conference_Location :
Brighton, UK
DOI :
10.1109/EUMA.1979.332720
