Terahertz intervalley transfer gain in bulk GaAs under high electric field

Author

Zhu, Yiming ; Wang, Shuling ; Chen, Lin ; He, Boyong ; Zhuang, Songlin

Author_Institution

Shanghai Key Lab. of Modern Opt. Syst., Univ. of Shanghai for Sci. & Technol., Shanghai, China

fYear

2009

fDate

30-3 Aug. 2009

Firstpage

1

Lastpage

2

Abstract

Intrinsic property of terahertz intervalley transfer gain in bulk GaAs have been investigated by time-domain terahertz spectroscopy. The cutoff frequency for the gain can reach ~750 THz for F>50 kV/cm at 10 K.

Keywords

Fourier transform spectra; III-V semiconductors; electrical conductivity; electro-optical effects; gallium arsenide; high-speed optical techniques; photoexcitation; terahertz wave spectra; Fourier spectrum; GaAs; bulk gallium arsenide; dynamical conductivity spectra; femtosecond laser pulse; photoexcitation; step-function-like input electric field; temperature 10 K; terahertz intervalley transfer gain; time-domain terahertz spectroscopy; Acceleration; Conductivity; Cutoff frequency; Diodes; Electric variables measurement; Electron emission; Gallium arsenide; Optical pulse generation; Spectroscopy; Time domain analysis; Intervalley Transfer; Time-domain terahertz spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-3829-7

Electronic_ISBN

978-1-4244-3830-3

Type

conf

DOI

10.1109/CLEOPR.2009.5292384

Filename

5292384