Title :
Terahertz intervalley transfer gain in bulk GaAs under high electric field
Author :
Zhu, Yiming ; Wang, Shuling ; Chen, Lin ; He, Boyong ; Zhuang, Songlin
Author_Institution :
Shanghai Key Lab. of Modern Opt. Syst., Univ. of Shanghai for Sci. & Technol., Shanghai, China
Abstract :
Intrinsic property of terahertz intervalley transfer gain in bulk GaAs have been investigated by time-domain terahertz spectroscopy. The cutoff frequency for the gain can reach ~750 THz for F>50 kV/cm at 10 K.
Keywords :
Fourier transform spectra; III-V semiconductors; electrical conductivity; electro-optical effects; gallium arsenide; high-speed optical techniques; photoexcitation; terahertz wave spectra; Fourier spectrum; GaAs; bulk gallium arsenide; dynamical conductivity spectra; femtosecond laser pulse; photoexcitation; step-function-like input electric field; temperature 10 K; terahertz intervalley transfer gain; time-domain terahertz spectroscopy; Acceleration; Conductivity; Cutoff frequency; Diodes; Electric variables measurement; Electron emission; Gallium arsenide; Optical pulse generation; Spectroscopy; Time domain analysis; Intervalley Transfer; Time-domain terahertz spectroscopy;
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
DOI :
10.1109/CLEOPR.2009.5292384
