Title :
Broad and Narrow-Band Frequency Discriminators using Dual Gate GaAs Field Effect Transistors
Author_Institution :
Plessey Research (Casewell) Limited, Allen Clark Research Centre, Nr. Towcester, Northants.
Abstract :
The use of a dual-gate gallium arsenide FET as a broad-band (and narrow-band) frequency discriminator is described. Such a circuit has use in IFM systems and phase locked loops respectively. The discriminator employs a GaAs FET amplifier used as a limiter followed by a dual-gate device whose phase angle differences between the first and second gate to drain transmission coefficients with frequency can be employed as a frequency sensitive element. The paper describes the biasing needed of the device to achieve optimum performance and details the results of a full X-band discriminator using the methods outlined.
Keywords :
Circuits; Dynamic range; Electrochemical machining; FETs; Frequency; Gallium arsenide; Narrowband; Phase locked loops; Transconductance; Voltage;
Conference_Titel :
Microwave Conference, 1979. 9th European
Conference_Location :
Brighton, UK
DOI :
10.1109/EUMA.1979.332723