DocumentCode :
1975505
Title :
Broad and Narrow-Band Frequency Discriminators using Dual Gate GaAs Field Effect Transistors
Author :
Pengelly, R.S.
Author_Institution :
Plessey Research (Casewell) Limited, Allen Clark Research Centre, Nr. Towcester, Northants.
fYear :
1979
fDate :
17-20 Sept. 1979
Firstpage :
326
Lastpage :
330
Abstract :
The use of a dual-gate gallium arsenide FET as a broad-band (and narrow-band) frequency discriminator is described. Such a circuit has use in IFM systems and phase locked loops respectively. The discriminator employs a GaAs FET amplifier used as a limiter followed by a dual-gate device whose phase angle differences between the first and second gate to drain transmission coefficients with frequency can be employed as a frequency sensitive element. The paper describes the biasing needed of the device to achieve optimum performance and details the results of a full X-band discriminator using the methods outlined.
Keywords :
Circuits; Dynamic range; Electrochemical machining; FETs; Frequency; Gallium arsenide; Narrowband; Phase locked loops; Transconductance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1979. 9th European
Conference_Location :
Brighton, UK
Type :
conf
DOI :
10.1109/EUMA.1979.332723
Filename :
4131365
Link To Document :
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