The oxidized porous silicon field emission array

Author

Smit, D.D. ; Demroff, H.P. ; Elliot, T.S. ; Kasprowicz, T.B. ; Lee, B. ; Mazumdar, T.K. ; McIntyre, P.M. ; Pang, Y. ; Trost, H.-J.

Author_Institution

Dept. of Phys., Texas A&M Univ., College Station, TX, USA

fYear

1993

fDate

17-20 May 1993

Firstpage

2708

Abstract

The goal of developing a highly efficient microwave power source has led us to investigate new methods of electron field emission. One method presently under consideration involves the use of oxidized porous silicon thin films. We have used this technology to fabricate the first working field emission arrays from this substance. This approach reduces the diameter of an individual emitter to the nanometer scale. Tests of the first samples are encouraging, with extracted electron currents to nearly 1 mA resulting from less than 20 V of pulsed DC gate voltage. Modulated emission at 5 MHz was also observed. Development of a full-scale emission array capable of delivering an electron beam at 18 GHz of minimum density 100 A/cm² is in progress

Keywords

electron field emission; nuclear electronics; porous materials; power supplies to apparatus; silicon compounds; vacuum microelectronics; 18 GHz; 5 MHz; Si-SiO₂; electron beam; electron field emission; extracted electron currents; microwave power source; modulated emission; nanometer scale; oxidized porous Si field emission array; oxidized porous Si thin films; pulsed DC gate voltage; Cathodes; Electron beams; Etching; Fabrication; Light emitting diodes; Metallization; Physics; Silicon; Surface morphology; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Particle Accelerator Conference, 1993., Proceedings of the 1993

Conference_Location

Washington, DC

Print_ISBN

0-7803-1203-1

Type

conf

DOI

10.1109/PAC.1993.309436

Filename

309436