Title :
Study on Reliability of Low Noise GaAs MESFETs
Author :
Suzuki, T. ; Otsubo, M. ; Ishii, T. ; Shirahata, K.
Author_Institution :
Semiconductor Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan
Abstract :
Analysis is made with regard to the failure mode of GaAs FETs and cause of the failure is investigated. It is fundamental for improving reliability of GaAs FETs to suppress the localized high electric field and the gate metal migration. The deep gate recess and the thick gate structure and the unsymmetric configuration of the gate location between source and drain are introduced. DC surge pulse capability and the RF input power capability of the improved GaAs FETs are 2 times and more than 5 times, respectively compared with conventional GaAs FETs.
Keywords :
Circuits; Electric breakdown; FETs; Failure analysis; Gallium arsenide; MESFETs; Radio frequency; Surges; Testing; Voltage;
Conference_Titel :
Microwave Conference, 1979. 9th European
Conference_Location :
Brighton, UK
DOI :
10.1109/EUMA.1979.332724
