Cathodoluminescence and photoluminescence study of trap centers in amorphous silicon oxynitride

Author

Gritsenko, V.A. ; Shavalgin, Yu.G. ; Pundur, P.A. ; Wong, H. ; Lau, W.M.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia

Volume

1

fYear

2000

fDate

2000

Firstpage

251

Abstract

Amorphous silicon oxynitride (a-SiO_xN_y) films with different compositions were prepared using low-pressure chemical vapor deposition (LPCVD) technique, The cathodoluminescence and photoluminescence of this samples were measured from the red band to the ultraviolet band to study the trap centers in silicon oxynitride. A 1.8-1.9 eV band was found and is attributed to the oxygen and nitrogen atoms with unpaired electrons whereas the 2.7 eV band is attributed to two-fold coordinated silicon atoms with two electrons. The 5.4 eV shoulder is due to the peroxy radicals and other ultraviolet bands are supposed to due due to the Si-Si bonds

Keywords

CVD coatings; amorphous state; cathodoluminescence; electron traps; photoluminescence; semiconductor thin films; silicon compounds; LPCVD; SiON; amorphous silicon oxynitride; cathodoluminescence; peroxy radicals; photoluminescence; trap centers; two-fold coordinated silicon atoms; Amorphous silicon; Atomic measurements; Bonding; Charge carrier processes; Electron traps; Luminescence; MOS devices; Paramagnetic resonance; Photoluminescence; Physics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. Proceedings. 2000 22nd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-5235-1

Type

conf

DOI

10.1109/ICMEL.2000.840567

Filename

840567