Title :
Uniform Growth of InSb on GaAs in a Rotating Disk Reactor by LPMOVPE
Author :
McKee, M.A. ; Yoo, B.S. ; Stall, R.A.
Author_Institution :
EMCORE Corporation, Somerset, N.J.
Keywords :
Epitaxial layers; Gallium arsenide; Hall effect; Inductors; Temperature; Thickness measurement;
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
DOI :
10.1109/MOVPE.1992.664985
