Title :
A new device concept: Ballistic electron wave swing (BEWAS) to generate THz-signal power, theory and experimental verification
Author_Institution :
Tech. Univ. Darmstadt, Darmstadt, Germany
Abstract :
A new type of active device is presented, which can provide relatively large signal powers in the frequency range up to 2 THz. It is based on an electron resonance structure formed by a semiconductor heterojunction structure. The electrons of the n-layer need to be accelerated by an applied alternating voltage Ve They reach the barrier of the wide-gap semiconductor and are reflected there without loss of kinetic energy. They then travel ballistically towards the opposite barrier, where they are reflected again. When Ve changes the polarity, this process continues. The resulting electron resonance produces THz signals.
Keywords :
ballistic transport; semiconductor heterojunctions; terahertz wave devices; terahertz wave generation; wide band gap semiconductors; THz-signal power generation; active device; ballistic electron wave swing; electron resonance structure; n-layer; semiconductor heterojunction structure; wide-gap semiconductor; Acceleration; Electromagnetic scattering; Electrons; Frequency; Indium gallium arsenide; Optical resonators; Power generation; Resonance; Signal generators; Voltage; Ballistic Resonance; Nanometric Heterostructure; Terahertz Source;
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
DOI :
10.1109/CLEOPR.2009.5292402