Title :
GaAs BIJFET technology for linear circuits
Author :
Yang, J.Y. ; Morris, F.J. ; Plumton, D.L. ; Jeffrey, E.N.
Author_Institution :
Texas Instrum., Dallas, TX, USA
Abstract :
BIJFET (bipolar junction FET) technology that integrates p-channel JFETs and n-p-n HBTs (heterojunction bipolar transistors) has been developed. The devices are fabricated using epi overgrowth of an AlGaAs layer onto a GaAs layer, which simultaneously results in the emitter on the base for the n-p-n and the gate on the channel for the PJFET. The individual HBTs and PJFETs showed better stability over a wide temperature range than comparable Si devices. A prototype op amp was designed to demonstrate the capability of the BIJFET process. A measured open-loop gain of 50 dB and an open-loop gain bandwidth product of 3.6 GHz compare favorably with those of Si monolithic BIJFET op amps.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; junction gate field effect transistors; linear integrated circuits; AlGaAs-GaAs; BIJFET technology; bipolar junction FET; epi overgrowth; linear circuits; n-p-n HBTs; open-loop gain; open-loop gain bandwidth product; p-channel JFETs; temperature range; FETs; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; JFETs; Linear circuits; Operational amplifiers; Prototypes; Stability; Temperature distribution;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69357
