Title :
How forward body bias helps to reduce ground bouncing noise and silicon area in MTCMOS circuits: Divulging the basic mechanism
Author :
Jiao, Hailong ; Kursun, Volkan
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
Forward body bias is an effective technique for reducing mode transition noise and area overhead associated with Multi-threshold CMOS (MTCMOS) circuits. In this paper, the principal mechanism of noise reduction and silicon area compaction in forward-body-biased MTCMOS circuits is revealed and discussed in detail. Tradeoffs between area and leakage power consumption in forward-body-biased MTCMOS circuits are evaluated. Design guidelines are provided for optimum sizing of noise-control transistor and appropriate selection of body bias voltage to fully utilize the benefits of the forward body bias technique.
Keywords :
CMOS integrated circuits; design engineering; leakage currents; area overhead; body bias voltage; design guidelines; forward body bias; forward-body-biased MTCMOS circuits; ground bouncing noise; leakage power consumption; mode transition noise; multithreshold CMOS circuits; noise reduction; noise-control transistor; silicon area compaction; CMOS integrated circuits; CMOS technology; Compaction; Noise; Power demand; Silicon; Transistors; Reactivation noise; dominant noise component; leakage power consumption; optimum transistor size; overall electrical quality;
Conference_Titel :
SoC Design Conference (ISOCC), 2010 International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-8633-5
DOI :
10.1109/SOCDC.2010.5682985
