TFA image sensors: from the one transistor cell to a locally adaptive high dynamic range sensor

Author

Schneider, B. ; Fischer, H. ; Benthien, S. ; Keller, H. ; Lule, T. ; Rieve, P. ; Sommer, M. ; Schulte, J. ; Bohm, M.

Author_Institution

Inst. fur Halbleiterelektronik, Siegen Univ., Germany

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

209

Lastpage

212

Abstract

TFA (Thin Film on ASIC) image sensors consist of an amorphous silicon (a-Si:H) based optical detector on top of an ASIC which performs signal readout or signal processing for each individual pixel. In this paper we present recent prototypes of image sensors in TFA technology. The ASICs have been fabricated in a standard 0.7 /spl mu/m CMOS process, the detector multilayer was deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD).

Keywords

CMOS integrated circuits; amorphous semiconductors; application specific integrated circuits; elemental semiconductors; hydrogen; image sensors; plasma CVD coatings; silicon; thin film transistors; 0.7 micron; CMOS process; PECVD; Si:H; TFA image sensor; Thin Film on ASIC; amorphous silicon optical detector; locally adaptive high dynamic range sensor; multilayer; signal processing; signal readout; transistor cell; Amorphous silicon; Application specific integrated circuits; Image sensors; Optical detectors; Optical films; Optical signal processing; Pixel; Semiconductor thin films; Signal processing; Thin film sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650341

Filename

650341