Title :
TFA image sensors: from the one transistor cell to a locally adaptive high dynamic range sensor
Author :
Schneider, B. ; Fischer, H. ; Benthien, S. ; Keller, H. ; Lule, T. ; Rieve, P. ; Sommer, M. ; Schulte, J. ; Bohm, M.
Author_Institution :
Inst. fur Halbleiterelektronik, Siegen Univ., Germany
Abstract :
TFA (Thin Film on ASIC) image sensors consist of an amorphous silicon (a-Si:H) based optical detector on top of an ASIC which performs signal readout or signal processing for each individual pixel. In this paper we present recent prototypes of image sensors in TFA technology. The ASICs have been fabricated in a standard 0.7 /spl mu/m CMOS process, the detector multilayer was deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD).
Keywords :
CMOS integrated circuits; amorphous semiconductors; application specific integrated circuits; elemental semiconductors; hydrogen; image sensors; plasma CVD coatings; silicon; thin film transistors; 0.7 micron; CMOS process; PECVD; Si:H; TFA image sensor; Thin Film on ASIC; amorphous silicon optical detector; locally adaptive high dynamic range sensor; multilayer; signal processing; signal readout; transistor cell; Amorphous silicon; Application specific integrated circuits; Image sensors; Optical detectors; Optical films; Optical signal processing; Pixel; Semiconductor thin films; Signal processing; Thin film sensors;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650341
